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Home > Products > Diodes > Rectifiers > ///TRS4E65H,S1Q

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TRS4E65H,S1QQuantity:4178

Part No TRS4E65H,S1Q
Manufacturer Toshiba Semiconductor and Storage
Description G3 SIC-SBD 650V 4A TO-220-2L
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Current-ReverseLeakage@Vr55 µA @ 650 V
SpeedNo Recovery Time > 500mA (Io)
FThrough Hole
ProductStatusActive
Package/CaseTO-220-2L
Grade-
Capacitance@Vr263pF @ 1V, 1MHz
ReverseRecoveryTime(trr)0 ns
MountingTypeTO-220-2
Series-
Qualification
SupplierDevicePackage175°C
Voltage-Forward(Vf)(Max)@If1.35 V @ 4 A
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
OperatingTemperature-Junction-
Current-AverageRectified(Io)4A
PackageTube

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