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TPCC8105,L1Q(CMQuantity:4191

Part No TPCC8105,L1Q(CM
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 30V 23A 8TSON
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2V @ 500µA
Vgs(th)(Max)@Id+20V, -25V
Vgs76 nC @ 10 V
FETFeature700mW (Ta), 30W (Tc)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-TSON Advance (3.3x3.3)
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSVI
Qualification
SupplierDevicePackage8-VDFN Exposed Pad
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C23A (Ta)
Vgs(Max)3240 pF @ 10 V
MinRdsOn)7.8mOhm @ 11.5A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)150°C

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