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Home > Products > Transistors > FETs, MOSFETs > ///TK12J60W,S1VE(S

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TK12J60W,S1VE(SQuantity:3060

Part No TK12J60W,S1VE(S
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 600V 11.5A TO3P
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Datasheets
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Specifications

RdsOn(Max)@Id3.7V @ 600µA
Vgs(th)(Max)@Id±30V
Vgs25 nC @ 10 V
FETFeature110W (Tc)
DraintoSourceVoltage(Vdss)600 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-3P(N)
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-3P-3, SC-65-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C11.5A (Ta)
Vgs(Max)890 pF @ 300 V
MinRdsOn)300mOhm @ 5.8A, 10V
PackageTray
PowerDissipation(Max)150°C

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