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Buy SI7160DP-T1-E3 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy SI7160DP-T1-E3 with confidence from acme-chip.com, 1 Year Warranty
SI7160DP-T1-E3Quantity:8566
| Part No | SI7160DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 |
| Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
| Datasheets |
Specifications
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 5W (Ta), 27.7W (Tc) |
| Package / Case: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | PowerPAK® SO-8 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 30V 20A (Tc) 5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | TrenchFET® |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds: | 2970pF @ 15V |
| Vgs (Max): | ±16V |
| Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 15A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Introduce
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