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IPD053N08N3GBTMA1Quantity:4502

Part No IPD053N08N3GBTMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 80V 90A TO252-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.5V @ 90µA
Vgs(th)(Max)@Id-
Vgs±20V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)80 V
OperatingTemperatureTO-252-3, DPak (2 Leads + Tab), SC-63
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType69 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage4750 pF @ 40 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C90A (Tc)
Vgs(Max)150W (Tc)
MinRdsOn)5.3mOhm @ 90A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)PG-TO252-3

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