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GT10J312(Q)Quantity:3482

Part No GT10J312(Q)
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 600V 10A 60W TO220SM
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)600 V
SwitchingEnergy-
OperatingTemperature150°C (TJ)
ProductStatusObsolete
Package/Case200 ns
GradeThrough Hole
MountingType-
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C400ns/400ns
QualificationTO-262-3 Long Leads, I2PAK, TO-262AA
SupplierDevicePackage-
InputTypeStandard
Vce(on)(Max)@Vge20 A
GateCharge-
Current-Collector(Ic)(Max)10 A
Ic2.7V @ 15V, 10A
TestCondition300V, 10A, 100Ohm, 15V
PackageTube
Power-Max60 W
IGBTType-

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