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See Product Specifications for product details.
Buy GA10SICP12-263 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy GA10SICP12-263 with confidence from acme-chip.com, 1 Year Warranty
GA10SICP12-263Quantity:4352
Part No | GA10SICP12-263 |
---|---|
Manufacturer | GeneSiC Semiconductor |
Description | TRANS SJT 1200V 25A D2PAK |
Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
Datasheets |
Reference Price (In US Dollars) | Get a Quote |
Specifications
RdsOn(Max)@Id | - |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | - |
FETFeature | 170W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | - |
ProductStatus | Active |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-263-7 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
FETType | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Current-ContinuousDrain(Id)@25°C | 25A (Tc) |
Vgs(Max) | 1403 pF @ 800 V |
MinRdsOn) | 100mOhm @ 10A |
Package | Tube |
PowerDissipation(Max) | 175°C (TJ) |
Introduce
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