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Home > Products > Transistors > FETs, MOSFETs > ///GA10SICP12-263

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GA10SICP12-263Quantity:4352

Part No GA10SICP12-263
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 25A D2PAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id-
Vgs(th)(Max)@Id-
Vgs-
FETFeature170W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn-
ProductStatusActive
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypeTO-263-7
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C25A (Tc)
Vgs(Max)1403 pF @ 800 V
MinRdsOn)100mOhm @ 10A
PackageTube
PowerDissipation(Max)175°C (TJ)

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