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Home > Products > Transistors > FETs, MOSFETs > ///G080P06T

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Part No G080P06T
Manufacturer Goford Semiconductor
Description P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs186 nC @ 10 V
FETFeature294W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesTrenchFET®
Qualification
SupplierDevicePackageTO-220-3
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C195A (Tc)
Vgs(Max)15195 pF @ 30 V
MinRdsOn)7.5mOhm @ 20A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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