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Home > Products > Transistors > FETs, MOSFETs > ///FDMS86163P-23507X

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FDMS86163P-23507XQuantity:4096

Part No FDMS86163P-23507X
Manufacturer onsemi
Description FET -100V 22.0 MOHM PQFN56
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±25V
Vgs59 nC @ 10 V
FETFeature2.5W (Ta), 104W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-PQFN (5x6)
InputCapacitance(Ciss)(Max)@Vds-
SeriesPowerTrench®
Qualification
SupplierDevicePackage8-PowerTDFN
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C7.9A (Ta), 50A (Tc)
Vgs(Max)4085 pF @ 50 V
MinRdsOn)22mOhm @ 7.9A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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