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FDB6676SQuantity:14652

Part No FDB6676S
Manufacturer Fairchild Semiconductor
Description Power Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Max Operating Temperature150 °C
Power Dissipation70 W
Min Operating Temperature-55 °C
Drain to Source Resistance6 mΩ
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage30 V
Element ConfigurationSingle
Rise Time11 ns
Gate to Source Voltage (Vgs)16 V
Turn-Off Delay Time89 ns
Fall Time31 ns
RoHSCompliant

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