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Home > Products > Transistors > FETs, MOSFETs > ///BSB056N10NN3GXUMA2

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Part No BSB056N10NN3GXUMA2
Manufacturer Infineon Technologies
Description TRENCH >=100V
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-40°C ~ 150°C (TJ)
FET Feature-
PackageTape & Reel (TR)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Grade-
Mounting TypeSurface Mount
Product StatusActive
Rds On (Max) @ Id, Vgs5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 100µA
Supplier Device PackageMG-WDSON-5-3
Drain to Source Voltage (Vdss)100 V
Series-
Power Dissipation (Max)2.8W (Ta), 78W (Tc)
Qualification-
Package / CaseDirectFET™ Isometric MN
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C9A (Ta), 83A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V

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